IKW25N120T2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon stock available on our website
SOT-23
IKW25N120T2 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Published
2008
Pbfree Code
yes
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Terminal Form
THROUGH-HOLE
Pin Count
3
Number of Elements
1
Power Dissipation-Max
349W
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
POWER CONTROL
Forward Voltage
1.65V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Reverse Recovery Time
195 ns
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.2V
Turn On Time
49 ns
Turn Off Time-Nom (toff)
504 ns
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.4V
Height
21.1mm
Length
16.13mm
Width
5.21mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
In-Stock:4939 items
IKW25N120T2 Product Details
Description: The Infineon Technologies AG IKW25N120T2 is a single IGBT transistor with a maximum collector-emitter voltage of 1200V and a maximum collector current of 50A. It has a maximum power dissipation of 349W and is packaged in a TO247-3 package.
Features: - Maximum collector-emitter voltage of 1200V - Maximum collector current of 50A - Maximum power dissipation of 349W - Packaged in a TO247-3 package - Low switching losses - High current carrying capability - High frequency operation - Low on-state voltage drop
Applications: The Infineon Technologies AG IKW25N120T2 single IGBT transistor is suitable for a wide range of applications, including motor control, power conversion, and power switching. It is also suitable for use in high-power switching applications, such as UPS systems, solar inverters, and industrial motor drives.
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