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IRG8CH106K10F

IRG8CH106K10F

IRG8CH106K10F

Infineon Technologies

IRG8CH106K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG8CH106K10F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~175°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 110A, 1Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 110A
Gate Charge700nC
Td (on/off) @ 25°C 80ns/380ns
RoHS StatusRoHS Compliant
In-Stock:4555 items

IRG8CH106K10F Product Details

IRG8CH106K10F Description


IRG8CH106K10F, manufactured by Infineon Technologies. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Infotainment & cluster Industrial Test & measurement Personal electronics Gaming . And the main parameters of this part is: IGBT 1200V 110A Die. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



IRG8CH106K10F Features


  • Package/Case: Die

  • Device Package: Die

  • RoHS: Lead free / RoHS Compliant



IRG8CH106K10F Applications


  • Industrial

  • Automotive

  • Personal electronics


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