SIGC07T60NCX7SA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
SIGC07T60NCX7SA1 Features
? Low VCE (ON) Trench IGBT Technology
? Low Switching Losses
? Maximum Junction Temperature 175 °C
? 5 μS short circuit SOA
? Square RBSOA
? 100% of The Parts Tested for ILM
SIGC07T60NCX7SA1 Applications
· drives
