IRG7CH23K10EF Description
IRG7CH23K10EF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7CH23K10EF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG7CH23K10EF has the common source configuration.
IRG7CH23K10EF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7CH23K10EF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
