SIGC11T60SNCX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC11T60SNCX1SA2 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
10A
Test Condition
400V, 10A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 10A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
28ns/198ns
RoHS Status
ROHS3 Compliant
In-Stock:2569 items
SIGC11T60SNCX1SA2 Product Details
SIGC11T60SNCX1SA2 Description
The SIGC11T60SNCX1SA2 is an IGBT Chip in NPT-technology. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
SIGC11T60SNCX1SA2 Features
Positive temperature coefficient
Easy paralleling
600V NPT technology
100μm chip
High input impedance
SIGC11T60SNCX1SA2 Applications
Drives
Chopper and inverters
Solar inverters
AC and DC motor drives
Switched Mode Power Supply
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