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IRG8B08N120KDPBF

IRG8B08N120KDPBF

IRG8B08N120KDPBF

Infineon Technologies

IRG8B08N120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG8B08N120KDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2015
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation89W
Reach Compliance Code unknown
Input Type Standard
Power - Max 89W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 15A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 5A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Gate Charge45nC
Td (on/off) @ 25°C 20ns/160ns
Switching Energy 300μJ (on), 300μJ (off)
RoHS StatusRoHS Compliant
In-Stock:2217 items

IRG8B08N120KDPBF Product Details

IRG8B08N120KDPBF Description


The IRG8B08N120KDPBF is an N-Channel Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.



IRG8B08N120KDPBF Features


  • Positive VCE(ON) Temperature Coefficient

  • 10μs Short Circuit SOA

  • Benchmark Low VCE(ON)

  • Square RBSOA and high ILM- rating

  • Lead-Free, RoHS compliant



IRG8B08N120KDPBF Applications


  • Industrial Motor Drive

  • UPS

  • Solar Inverters


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