IRGR4045DPBF Description
IRGR4045DPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DPBF provides high efficiency in a wide range of applications, and excellent current sharing in parallel operation. The transistor IRGR4045DPBF is suitable for a wide range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DPBF is in the D-Pak package with 77W power dissipation.
IRGR4045DPBF Features
Low VcE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the parts tested for ILM①
Positive VcE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
IRGR4045DPBF Applications
Communications equipment
Wireless infrastructure
Industrial
Test & Measurement
Personal electronics
PC & notebooks