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IRGR4045DPBF

IRGR4045DPBF

IRGR4045DPBF

Infineon Technologies

IRGR4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGR4045DPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation77W
Terminal FormGULL WING
Base Part Number IRGR4045
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 15ns
Element ConfigurationSingle
Power Dissipation39W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time27 ns
Power - Max 77W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 17 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 12A
Reverse Recovery Time 74 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2V
Turn On Time38 ns
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Turn Off Time-Nom (toff) 127 ns
IGBT Type Trench
Gate Charge19.5nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Height 6.22mm
Length 6.73mm
Width 2.39mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4261 items

IRGR4045DPBF Product Details

IRGR4045DPBF Description


IRGR4045DPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DPBF provides high efficiency in a wide range of applications, and excellent current sharing in parallel operation. The transistor IRGR4045DPBF is suitable for a wide range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DPBF is in the D-Pak package with 77W power dissipation.



IRGR4045DPBF Features


Low VcE (on) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

100% of the parts tested for ILM①

Positive VcE (on) Temperature Coefficient.

Ultra Fast Soft Recovery Co-pak Diode

Tighter Distribution of Parameters

Lead-Free, RoHS Compliant



IRGR4045DPBF Applications


Communications equipment

Wireless infrastructure

Industrial

Test & Measurement

Personal electronics

PC & notebooks


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