IRGBF20F Description
Compared to comparable bipolar transistors, International Rectifier's Insulated Gate Bipolar Transistors (IGBTs) offer higher useable current densities, but their gate-drive requirements are also less complex than those of the well-known power MOSFET. They offer a variety of high-voltage, high-current applications significant advantages.
IRGBF20F Features
All "tail" losses are included in switching-loss rating.
Medium operating frequency (1 to 10 kHz) optimization For a current versus. frequency graph, see Fig. 1.
IRGBF20F Applications
Switching applications
