IRG7PSH50UDPBF Description
IRG7PSH50UDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged transient performance. Moreover, the IRG7PSH50UDPBF IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.
IRG7PSH50UDPBF Features
Tight parameter distribution
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
Ultra-fast soft recovery co-packaged diode
IRG7PSH50UDPBF Applications
U.P.S.
Welding
Solar inverter
Induction heating
