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IRG7PH50K10DPBF

IRG7PH50K10DPBF

IRG7PH50K10DPBF

Infineon Technologies

IRG7PH50K10DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH50K10DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation400W
Rise Time-Max 80ns
Element ConfigurationSingle
Input Type Standard
Power - Max 400W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 90A
Reverse Recovery Time 130 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.4V
Test Condition 600V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 35A
Gate Charge300nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 90ns/340ns
Switching Energy 2.3mJ (on), 1.6mJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 110ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4502 items

IRG7PH50K10DPBF Product Details

IRG7PH50K10DPBF Description


The IRG7PH50K10DPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.



IRG7PH50K10DPBF Features


  • Low VCE(ON) and switching losses

  • 10μs Short Circuit SOA

  • Square RBSOA

  • Maximum Junction Temperature 150°C

  • Positive VCE (ON) Temperature Coefficient

  • VCES = 1200V

  • IC = 50A, TC =100°C

  • tSC ≥ 10μs, TJ(max) = 150°C

  • VCE(ON) typ. = 1.9V @ IC = 35A



IRG7PH50K10DPBF Applications


  • Solar Inverters

  • Welding

  • Industrial Motor Drive

  • UPS

  • Automotive

  • Traction

  • Energy transmission


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