IRGP6650D-EPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IRGP6650D-EPBF Applications
· Welding
· H Bridge Converters
IRGP6650D-EPBF Features
Low VCE(ON) and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and MaximumTemperature of 175℃
5us Short Circuit
PositiveVCE(ON)Temperature Co-efficient
Lead-free. RoHS compliant
