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IHW20T120FKSA1

IHW20T120FKSA1

IHW20T120FKSA1

Infineon Technologies

IHW20T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW20T120FKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 2006
Series TrenchStop®
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 178W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 140ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 40A
Turn On Time82 ns
Test Condition 600V, 20A, 28 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Turn Off Time-Nom (toff) 790 ns
IGBT Type Trench Field Stop
Gate Charge120nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 50ns/560ns
Switching Energy 1.8mJ (on), 1.5mJ (off)
RoHS StatusRoHS Compliant
In-Stock:2295 items

IHW20T120FKSA1 Product Details

IHW20T120FKSA1 Description


The IHW20T120FKSA1 is a Low Loss DuoPack: IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).



IHW20T120FKSA1 Features


  • Very soft, fast recovery anti-parallel EmCon? HE diode

  • Low EMI

  • Qualified according to JEDEC1 for target applications

  • Application specific optimisation of inverse diode

  • Pb-free lead plating; RoHS compliant

  • Short circuit withstand time – 10μs

  • Designed for :

- Soft Switching Applications

- Induction Heating

  • Trenchstop and Fieldstop technology for 1200 V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- easy parallel switching capability due to positive temperature coefficient in VCE(sat)



IHW20T120FKSA1 Applications


  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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