IRG7PH37K10D-EPBF Description
IRG7PH37K10D-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7PH37K10D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG7PH37K10D-EPBF has the common source configuration.
IRG7PH37K10D-EPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7PH37K10D-EPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
