IRG4PC30UPBF Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench? process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
IRG4PC30UPBF Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching,>200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
lndustry standard TO-247AC package
Lead-Free
IRG4PC30UPBF Benefits
- Generation 4 IGBT's offer highest efficiency available
-IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 lR IGBT's
