STGWT20H65FB Description
This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The component is a new HB series IGBT, which offers the best conduction and switching loss trade-off for any frequency converter's efficiency. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGWT20H65FB Features
TJ = 175 °C is the maximum junction temperature.
succession of fast switching
reduce the tail current
IC = 20 A, VCE(sat) = 1.55 V (typ. ),
distribution of tight parameters
Paralleling safely
a minimal heat resistance
STGWT20H65FB Applications
Switching applications
