NGTB15N135IHRWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on?state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications.
NGTB15N135IHRWG Features
? Extremely Efficient Trench with Fieldstop Technology
? 1350 V Breakdown Voltage
? Optimized for Low Case Temperature in IH Cooker Application
? Reliable and Cost Effective Single Die Solution
? These are Pb?Free Devices
NGTB15N135IHRWG Applications
? Inductive Heating
? Consumer Appliances
? Soft Switching
