IRG6I330UPBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150°C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDPapplications.
IRG6I330UPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
IRG6I330UPBF Applications
?Drives
?IndustrialPowerSupplies
-IndustrialSMPS
-IndustrialUPS
