IRG7PH35UD1MPBF Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRG7PH35UD1MPBF Features
? Low VCE (ON) trench IGBT Technology
? Low Switching Losses
? Square RBSOA
? Ultra-Low VF Diode
? 1300Vpk Repetitive Transient Capacity
? 100% of the Parts Tested for ILM
? Positive VCE (ON) Temperature Co-Efficient
? Tight Parameter Distribution
? Lead Free Package
IRG7PH35UD1MPBF Applications
■ Industrial application on 24 V
■ Graphic cards
■ Embedded computer systems
