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IRG4RC10SDTRPBF

IRG4RC10SDTRPBF

IRG4RC10SDTRPBF

Infineon Technologies

IRG4RC10SDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10SDTRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation38W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4RC10SDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation38W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time32ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 14A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.7V
Max Breakdown Voltage 600V
Turn On Time106 ns
Test Condition 480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 76ns/815ns
Switching Energy 310μJ (on), 3.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 1080ns
Height 1.2446mm
Length 6.7056mm
Width 6.223mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:2425 items

IRG4RC10SDTRPBF Product Details

IRG4RC10SDTRPBF Description

IRG4RC10SDTRPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4RC10SDTRPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4RC10SDTRPBF has the common source configuration.

IRG4RC10SDTRPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG4RC10SDTRPBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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