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IRG4BC15UDSTRLP

IRG4BC15UDSTRLP

IRG4BC15UDSTRLP

Infineon Technologies

IRG4BC15UDSTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC15UDSTRLP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN
Max Power Dissipation49W
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 49W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 14A
Reverse Recovery Time 28 ns
Collector Emitter Breakdown Voltage600V
Turn On Time37 ns
Test Condition 480V, 7.8A, 75 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff) 400 ns
Gate Charge23nC
Current - Collector Pulsed (Icm) 42A
Td (on/off) @ 25°C 17ns/160ns
Switching Energy 240μJ (on), 260μJ (off)
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3609 items

IRG4BC15UDSTRLP Product Details

IRG4BC15UDSTRLP Description


ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR



IRG4BC15UDSTRLP Features


? UltraFast: Designed for hard switching at high frequencies between 10 and 30 kHz.


? IGBT and ultra-soft recovery antiparallel diode packaged together


? Industry-standard TO-262 and D2Pak packaging


? Free of lead



IRG4BC15UDSTRLP Applications


Switching applications


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