HGTG20N60C3D IGBT Description
A Generation III MOS gated high voltage switching device called the HGTG20N60C3D combines the greatest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT is perfect for a variety of high voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as power supplies, drivers for solenoids, relays, and contractors, as well as AC and DC motor controllers.
HGTG20N60C3D IGBT Features
40A, 600V at TC = 25°C
Short Circuit Rated
600V Switching SOA Capability
Typical Fall Time: 140ns at 150°C
Low Conduction Loss
HGTG20N60C3D IGBT Applications
Industrial Applications
PFC Converters
Hard-Switching Applications
Inverter Applications
DC/AC Stages
TIG Welding Equipment
