NGTB50N65S1WG Description
NGTB50N65S1WG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTB50N65S1WG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
NGTB50N65S1WG Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
NGTB50N65S1WG Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
