Name: IRG4RC10SDPBF
Brand: Infineon Technologies
SKU: IRG4RC10SDPBF
Price: 0.79000 USD
Availability: InStock

new-10%

IRG4RC10SDPBF

Manufacturer part number:IRG4RC10SDPBF

Manufacturer:Infineon Technologies

Description:IRG4RC10SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4RC10SDPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	38W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG4RC10SDPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	31ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	14A
Reverse Recovery Time	28 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	106 ns
Test Condition	480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	76ns/815ns
Switching Energy	310μJ (on), 3.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	1080ns
Height	1.2446mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRG4RC10SDPBF Product Details

IRG4RC10SDPBF Description

IRG4RC10SDPBF is a 600v n-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRG4RC10SDPBF can be applied in Automotive, Infotainment & cluster, Communications equipment, Wired networking, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4RC10SDPBF is in the TO-252AA package with 38w Power Dissipation.