STGP30V60F Description
This STGP30V60F is an IGBT developed using an advanced proprietary trench gate field stop structure. The transistor STGP30V60F is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGP30V60F Features
Maximum junction temperature: Tj= 175 °C
Tail-less switching off
VcE(sat)= 1.85V (typ.) @Ic= 30A
Tight parameters distribution
Safe paralleling
Low thermal resistance
STGP30V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
