HGT1S7N60A4DS Description
The MOS gated high voltage switching devices HGTG7N60A4D, HGTP7N60A4D, and HGT1S7N60A4DS combine the finest properties of MOSFETs with bipolar transistors. HGTG7N60A4D, HGTP7N60A4D, and HGT1S7N60A4DS have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. The TA49331 development type IGBT was used. The development type TA49370 diode is utilized in anti-parallel. This IGBT is suited for a variety of high-voltage switching applications with high frequencies and low conduction losses. HGT1S7N60A4DS is a high-frequency switch-mode power supply that has been optimized.
HGT1S7N60A4DS Features
>100kHz Operation At 390V, 7A
200kHz Operation At 390V, 5A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
Low Conduction Loss
Temperature Compensating SABER? Model
HGT1S7N60A4DS Applications
