IGB50N65H5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IGB50N65H5ATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
TrenchStop™ 5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Input Type
Standard
Power - Max
270W
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 50A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
IGBT Type
Trench Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
23ns/173ns
Switching Energy
1.59mJ (on), 750μJ (off)
RoHS Status
ROHS3 Compliant
In-Stock:3088 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IGB50N65H5ATMA1 Product Details
IGB50N65H5ATMA1 Description
IGB50N65H5ATMA1 is a single IGBT from the manufacturer Infineon Technologies with the Gate Charge of 120nC. The operating temperature of the IGB50N65H5ATMA1 is -40°C~175°C TJ and its maximum power dissipation is 270W. IGB50N65H5ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Voltage - Collector Emitter Breakdown (Max) of IGB50N65H5ATMA1 is 650V.
IGB50N65H5ATMA1 Features
High speed H5 technology offering
Best-in-Class efficiency in hard switching and resonant topologies
650V breakdown voltage
Low QG
Maximum junction temperature 175°C
Pb-free lead plating;RoHS compliant
IGB50N65H5ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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