IRG4PSH71UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PSH71UDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
ULTRA FAST SWITCHING
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
350W
Current Rating
99A
Number of Elements
1
Element Configuration
Single
Power Dissipation
350W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
46 ns
Transistor Application
POWER CONTROL
Rise Time
77ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
350 ns
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
99A
Reverse Recovery Time
110 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.52V
Turn On Time
121 ns
Test Condition
960V, 70A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 70A
Turn Off Time-Nom (toff)
810 ns
Gate Charge
380nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
46ns/250ns
Switching Energy
8.8mJ (on), 9.4mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
15.24mm
Length
10.5156mm
Width
4.699mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4919 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$14.64000
$14.64
10
$13.45700
$134.57
100
$11.36520
$1136.52
500
$10.11016
$5055.08
IRG4PSH71UDPBF Product Details
IRG4PSH71UDPBF Description
The IRG4PSH71UDPBF IGBT from Infineon Technologies is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. The ultrafast switching speed is tuned for operating frequencies ranging from 8 to 40kHz in hard switching and 200kHz in soft switching in resonant mode. Generation 4 IGBTs have tighter parameter distribution and higher efficiency (lower switching and conduction losses) than previous generations.
IRG4PSH71UDPBF Features
Optimized for specific application conditions
HEXFRED? anti-parallel diode minimizes switching losses and EMI
Creepage distance increased to 5.35mm
High efficiency
Maximum power density
IRG4PSH71UDPBF Applications
Alternative Energy
Maintenance & Repair
Power Management
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