IRG4BC30F-S Description
IRG4BC30F-S emerges as an insulated gate bipolar transistor provided by Infineon Technologies. It is a generation 4 IGBT providing tighter parameter distribution and higher efficiency than generation 3. IRG4BC30F-S is optimized for medium operating frequencies (1-5 kHz in hard switching) and for specified application conditions. It is available in the TO-220AB package for the purpose of saving board space.
IRG4BC30F-S Features
Available in the TO-220AB package
Tighter parameter distribution
Higher efficiency
Optimized for specified application conditions
Medium operating frequencies
IRG4BC30F-S Applications
AC motors
Frequency converters
Switching power supplies
Lighting circuits
Traction drives
