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IRG4BC30WPBF

IRG4BC30WPBF

IRG4BC30WPBF

Infineon Technologies

IRG4BC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30WPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2003
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation100W
Terminal Position SINGLE
Current Rating23A
Number of Elements 1
Element ConfigurationDual
Power Dissipation100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time25 ns
Transistor Application POWER CONTROL
Rise Time17ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 99 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 23A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.7V
Turn On Time41 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 100ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:1018 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.002907$1.002907
10$0.946139$9.46139
100$0.892584$89.2584
500$0.842060$421.03
1000$0.794396$794.396

IRG4BC30WPBF Product Details

IRG4BC30WPBF Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

IRG4BC30WPBF Features

? Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V

? High Speed Switching

? Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A

? High Input Impedance

? Fast & Soft Anti-Parallel FWD

? UL Certified No.E209204Application

? AC & DC Motor Controls

? General Purpose Inverters

? Weldings

? Servo Controls

?UPS

IRG4BC30WPBF Applications

Air Conditioning

Motor Drives

Servo Drives


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