IRGB5B120KDPBF Description
IRGB5B120KDPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode. The main advantages of using the Insulated Gate Bipolar Transistor over other types of transistor devices are its high voltage capability, low ON-resistance, ease of drive, relatively fast switching speeds and combined with zero gates drive current makes it a good choice for moderate speed, high voltage applications. The IRGB5B120KDPBF is offered in the TO-220AB package. It is specified for operation from –55°C to +150°C.
IRGB5B120KDPBF Features
Low VCE (on) Non-Punch Through IGBT Technology
Low Diode VF
10μs Short Circuit Capability
Square RBSOA
Ultrasoft Diode Reverse Recovery Characteristics
Positive VCE (on) Temperature Coefficient
TO-220 Package
IRGB5B120KDPBF Applications
inverters
converters
power supplies
pulse-width modulated (PWM)
variable speed control
switch-mode power supplies
solar powered DC-AC inverter
