IRG4BC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30SPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
250
Current Rating
34A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Dual
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
22 ns
Transistor Application
POWER CONTROL
Rise Time
18ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
540 ns
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
34A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.4V
Turn On Time
40 ns
Test Condition
480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 18A
Turn Off Time-Nom (toff)
1550 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
68A
Td (on/off) @ 25°C
22ns/540ns
Switching Energy
260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
590ns
Height
15.24mm
Length
10.54mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3735 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.00000
$3
10
$2.69500
$26.95
100
$2.16610
$216.61
500
$1.77962
$889.81
IRG4BC30SPBF Product Details
IRG4BC30SPBF Description
The IRG4BC30SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
IRG4BC30SPBF Features
Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-220AB package
IGBTs optimized for specified application conditions
ROHS3 Compliant
Lead-Free
No SVHC
IRG4BC30SPBF Applications
HVAC
Consumer Electronics
Power Management
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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