IRG4RC10KD Description
ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10KD Features
?Short Circuit Rated UltraFast: Vge = 15V, 10ps At 125°C, and optimized for high operating frequencies >5.0 kHz
?Compared to earlier generations, the Generation 4 IGBT design offers tighter parameter dispersion and greater efficiency.
?HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes are packed with IGBT for usage in bridge designs.
?TO-252AA packaging, which is industry standard
IRG4RC10KD Applications
Switching applications
