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IRGS4064DPBF

IRGS4064DPBF

IRGS4064DPBF

Infineon Technologies

IRGS4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS4064DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation101W
Element ConfigurationSingle
Input Type Standard
Power - Max 101W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.91V
Max Collector Current 20A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.6V
Test Condition 400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A
IGBT Type Trench
Gate Charge32nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 27ns/79ns
Switching Energy 29μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 29ns
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2227 items

IRGS4064DPBF Product Details

IRGS4064DPBF Description


IRGS4064DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well-suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.



IRGS4064DPBF Features


Low VCE (on) Trench IGBT technology

Low switching losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

Positive VCE (on) temperature coefficient



IRGS4064DPBF Applications


Industrial motor drive

UPS

Solar Inverters

Welding


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