SGR20N40LTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGR20N40LTM Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
400V
Max Power Dissipation
45W
Current Rating
150A
Element Configuration
Single
Power Dissipation
45W
Input Type
Standard
Collector Emitter Voltage (VCEO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
4.5V
Vce(on) (Max) @ Vge, Ic
8V @ 4.5V, 150A
IGBT Type
Trench
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1886 items
SGR20N40LTM Product Details
SGR20N40LTM Description
Compared to transistors with a planar gate structure, Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure offer better conduction and switching performance. They are also highly noise-resistant. These gadgets work great for strobe applications.
SGR20N40LTM Features
Large input resistance
High maximum current capacity (150A)
Easy gate operation
SGR20N40LTM Applications
Bright flash.
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