IRG4BC20SDPBF Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20SDPBF Features
? Low voltage drop of 1.4Vtyp. at 10A
? S-Series: Reduces power loss at PWM frequencies of up to 3 KHz for inverter drives and up to 4 KHz for brushless DC drives.
? Extremely Restricted VCE(on) Distribution
? For usage in bridge topologies, IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes.
? TO-220AB packaging, which is industry standard
? Free of lead
IRG4BC20SDPBF Applications
Switching applications
