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IXGH38N60U1

IXGH38N60U1

IXGH38N60U1

IXYS

IGBT 600V 76A 200W TO247AD

SOT-23

IXGH38N60U1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
PackagingTube
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation200W
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 76A
Continuous Drain Current (ID) 38A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage600V
Drain to Source Breakdown Voltage 600V
Turn On Time200 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 38A
Turn Off Time-Nom (toff) 1800 ns
Fall Time-Max (tf) 1100ns
RoHS StatusRoHS Compliant
In-Stock:1660 items

About IXGH38N60U1

The IXGH38N60U1 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 600V 76A 200W TO247AD.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXGH38N60U1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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