IRG4BC40U Description
The bipolar transistor IRG4BC40U allows a small current to be injected into one of its terminals to control the much larger current flowing between the other two terminals so that the device can be amplified or switched. BJT uses two junctions between two semiconductor types, n-type and p-type, which are regions in the single crystal of the material.
IRG4BC40U Featues
·UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching>200 kHz in resonant mode
·Generation 4 1GBT design provides tighter
parameter distribution and higher efficiency than Generation3
·Industry standard TO-220AB package
IRG4BC40U Applications
amplification
switching
