IRG7PH42UD-EP

Name: IRG7PH42UD-EP
Brand: Infineon Technologies
SKU: IRG7PH42UD-EP
Availability: InStock

new-10%

Manufacturer part number:IRG7PH42UD-EP

Manufacturer:Infineon Technologies

Description:IRG7PH42UD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH42UD-EP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	320W
Number of Elements	1
Rise Time-Max	41ns
Element Configuration	Single
Power Dissipation	320W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	25 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	229 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	85A
Reverse Recovery Time	153 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2V
Turn On Time	51 ns
Test Condition	600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Turn Off Time-Nom (toff)	444 ns
IGBT Type	Trench
Gate Charge	157nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	25ns/229ns
Switching Energy	2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	86ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

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