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IRF7304TRPBF

IRF7304TRPBF

IRF7304TRPBF

Infineon Technologies

IRF7304TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7304TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 90mOhm
Additional FeatureLOGIC LEVEL COMPATIBLE
Power Rating 2W
Voltage - Rated DC -20V
Max Power Dissipation2W
Terminal FormGULL WING
Current Rating-4.3A
Base Part Number IRF7304PBF
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time8.4 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.3A
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time26ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -4.3A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.6A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 84 ns
FET Feature Logic Level Gate
Nominal Vgs -700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:7479 items

Pricing & Ordering

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IRF7304TRPBF Product Details

IRF7304TRPBF Description

The fifth generation HEXFET of the International Rectifier Company adopts advanced processing technology to achieve the lowest possible switch. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.

The SO-8 has been modified through a custom lead frame to enhance its thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. Multiple devices can be used in one application, greatly reducing the circuit board space. The package is designed for the vapor phase. Infrared wave soldering technology. In typical printed circuit board installation applications, it is possible to consume more than 0.8W.

IRF7304TRPBF Features


GenerationVTechnology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

IRF7304TRPBF Applications


HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.





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