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IRF7301TRPBF

IRF7301TRPBF

IRF7301TRPBF

Infineon Technologies

IRF7301TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7301TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Additional FeatureULTRA LOW RESISTANCE
Voltage - Rated DC 20V
Max Power Dissipation2W
Terminal FormGULL WING
Current Rating5.2A
Base Part Number IRF7301PBF
Number of Elements 2
Row Spacing6.3 mm
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time42ns
Fall Time (Typ) 51 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 5.2A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 44 ns
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:8585 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.334302$0.334302
10$0.315380$3.1538
100$0.297528$29.7528
500$0.280687$140.3435
1000$0.264799$264.799

IRF7301TRPBF Product Details

IRF7301TRPBF Description

The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device for use in a variety of applications.

SO-8 has been improved through a customized framework to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology. In a typical PCB installation application, it is possible to consume more than 0.8W.


IRF7301TRPBF Features


Generation VTechnology

Ultra Low On-Resistance

DualN-Channel Mosfet

Surface Mount

Available in Tape&Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

IRF7301TRPBF Applications

provides designers with an extremely efficient device for use in a variety of applications.




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