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FDMA1023PZ

FDMA1023PZ

FDMA1023PZ

ON Semiconductor

FDMA1023PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA1023PZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingGold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation1.5W
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.5W
Case Connection DRAIN
Turn On Delay Time9 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) -3.7A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -700 mV
Feedback Cap-Max (Crss) 135 pF
Height 750μm
Length 2mm
Width 2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6439 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.472516$2.472516
10$2.332562$23.32562
100$2.200530$220.053
500$2.075972$1037.986
1000$1.958464$1958.464

FDMA1023PZ Product Details

FDMA1023PZ Description

The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.


FDMA1023PZ Features

Max rDS(on) = 72m|? at VGS = ¨C4.5V, ID = ¨C3.7A

Max rDS(on) = 95m|? at VGS = ¨C2.5V, ID = ¨C3.2A

Max rDS(on) = 130m|? at VGS = ¨C1.8V, ID = ¨C2.0A

Max rDS(on) = 195m|? at VGS = ¨C1.5V, ID = ¨C1.0A

Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm

HBM ESD protection level > 2kV typical

RoHS Compliant

Free from halogenated compounds and antimonyoxides


FDMA1023PZ Applications

This product is general usage and suitable for many different applications.




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