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NTZD3152PT1G

NTZD3152PT1G

NTZD3152PT1G

ON Semiconductor

NTZD3152PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTZD3152PT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 500mOhm
Terminal Finish Tin (Sn)
Additional FeatureESD PROTECTION, LOW THRESHOLD
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation250mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating-430mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTZD3152P
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation250mW
Turn On Delay Time10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.43A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 600μm
Length 1.7mm
Width 1.3mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12637 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.287192$0.287192
10$0.270936$2.70936
100$0.255600$25.56
500$0.241132$120.566
1000$0.227483$227.483

NTZD3152PT1G Product Details

NTZD3152PT1G Description

The P-Channel Power MOSFET includes the P-Channel MOSFET-12V family, which is ideal for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters and low-voltage drive applications.


NTZD3152PT1G Features


? Low RDS(on) Improving System Efficiency

? Low Threshold Voltage

? ESD Protected Gate

? Small Footprint 1.6 x 1.6 mm

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant


NTZD3152PT1G Applications


? Load/Power Switches

? Power Supply Converter Circuits

? Battery Management

? Cell Phones, Digital Cameras, PDAs, Pagers






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