IRF6609 Description
The IRF6609 combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a SO-8-sized footprint and a 0.7 mm profile that offers the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling to increase thermal transfer in power systems, improving the best thermal resistance by 80% over the prior model.
IRF6609 Features
Low Conduction Losses
Low Switching Losses
Ideal Synchronous Rectifier MOSFET
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount
Techniques
IRF6609 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
