Name: SIR866DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR866DP-T1-GE3
Availability: InStock

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SIR866DP-T1-GE3

Manufacturer part number:SIR866DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 60A PPAK SO-8

Case Package:SOT-23

Datasheet:SIR866DP-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	1.9mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Ti[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	5.4W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.4W
Case Connection	DRAIN
Turn On Delay Time	42 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4730pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	49 ns
Turn-Off Delay Time	66 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	2.3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	39A
Drain to Source Breakdown Voltage	20V
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SIR866DP-T1-GE3

The SIR866DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 60A PPAK SO-8.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIR866DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.