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IPW65R019C7FKSA1

IPW65R019C7FKSA1

IPW65R019C7FKSA1

Infineon Technologies

IPW65R019C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPW65R019C7FKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
Series CoolMOS™ C7
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 446W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation446W
Case Connection DRAIN
Turn On Delay Time30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 58.3A, 10V
Vgs(th) (Max) @ Id 4V @ 2.92mA
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Rise Time27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 106 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage650V
Pulsed Drain Current-Max (IDM) 496A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:306 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$32.523200$32.5232
10$30.682264$306.82264
100$28.945532$2894.5532
500$27.307106$13653.553
1000$25.761421$25761.421

IPW65R019C7FKSA1 Product Details

IPW65R019C7FKSA1 Description


CoolMOS?is are volutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ)principle and pioneered by InfineonTechnologies. CoolMOS?C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation.The product portfolio provides all benefits of fast switching super junction MOSFET suffering Better efficiency, reduced gate charge,easy implementation and outstanding reliability.



IPW65R019C7FKSA1 Features


  • Increased MOSFET dv/dt ruggedness

  • Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

  • Best in class RDS(on)/package

  • Easy to use/drive

  • Pb-free plating,halogen free mold compound

  • Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)



IPW65R019C7FKSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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