Name: STF100N10F7
Brand: STMicroelectronics
SKU: STF100N10F7
Price: 2.92000 USD
Availability: InStock

new-10%

STF100N10F7

Manufacturer part number:STF100N10F7

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 22.5A, 10V ±20V 4369pF @ 50V 61nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STF100N10F7 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	DeepGATE™, STripFET™ VII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	80mOhm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Base Part Number	STF100N
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4369pF @ 50V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	45A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	180A
Avalanche Energy Rating (Eas)	400 mJ
Height	16.4mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STF100N10F7 Product Details

STF100N10F7 Description

The STF100N10F7 power MOSFET, created by STMicroelectronics, allows you to switch between different lines in addition to amplification of electronic signals. It can dissipate up to 150000 mW of power. This gadget makes use of stripfet technology. The operating temperature range for this MOSFET transistor is -55 ??C to 175 ??C. The enhancement mode is used by this N channel MOSFET transistor.