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IRLR3636TRPBF

IRLR3636TRPBF

IRLR3636TRPBF

Infineon Technologies

IRLR3636TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR3636TRPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 143W Tc
Element ConfigurationSingle
Current 50A
Operating ModeENHANCEMENT MODE
Power Dissipation143W
Case Connection DRAIN
Turn On Delay Time45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Rise Time216ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 99A
Threshold Voltage 2.5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Height 2.52mm
Length 6.7056mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3924 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.24000$2.24
500$2.2176$1108.8
1000$2.1952$2195.2
1500$2.1728$3259.2
2000$2.1504$4300.8
2500$2.128$5320

IRLR3636TRPBF Product Details

IRLR3636TRPBF Description


IRLR3636TRPBF is a 60V Single N-Channel Power MOSFET. The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The Infineon IRLR3636TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRLR3636TRPBF is in the TO-252-3 package with 143W power dissipation.



IRLR3636TRPBF Features


  • Optimized for Logic Level Drive

  • Very Low RDS(ON) at 4.5V VGS

  • Superior R*Q at 4.5V VGS

  • Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free



IRLR3636TRPBF Applications


  • DC Motor Drive

  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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