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STW3N170

STW3N170

STW3N170

STMicroelectronics

STW3N170 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW3N170 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW3N
Configuration Single
Power Dissipation-Max 160mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 2.3A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1490 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.18000$5.18
30$4.22400$126.72
120$3.87533$465.0396
510$3.19537$1629.6387

STW3N170 Product Details

STW3N170 Description


The STW3N170 is a single power MOSFET made by STMicroelectronics. STW3N170 has a temperature range of -55°C to 150°C TJ and a maximum power dissipation of 160mW. The STMicroelectronics consolidated strip-layout based MESH OVERLAYTM process was used to create this Power MOSFET. As a result, the product performs as well as or better than comparable standard parts from other manufacturers.


STW3N170 Features


? Intrinsic capacitances and Qg minimized

? High-speed switching

? 100% avalanche tested


STW3N170 Applications


? Switching applications

? Active Clamp Switch

? Switch application


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