IPW60R099C6FKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 796 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2660pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 37.9A.Pulsed drain current is maximum rated peak drain current 112A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPW60R099C6FKSA1 Features
the avalanche energy rating (Eas) is 796 mJ
based on its rated peak drain current 112A.
a 600V drain to source voltage (Vdss)
IPW60R099C6FKSA1 Applications
There are a lot of Infineon Technologies
IPW60R099C6FKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
