Name: AUIRF6215S
Brand: Infineon Technologies
SKU: AUIRF6215S
Price: 0.93000 USD
Availability: InStock

new-10%

AUIRF6215S

Manufacturer part number:AUIRF6215S

Manufacturer:Infineon Technologies

Description:AUIRF6215S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF6215S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 110W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	290m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.29Ohm
Pulsed Drain Current-Max (IDM)	44A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	310 mJ
RoHS Status	ROHS3 Compliant

AUIRF6215S Product Details

AUIRF6215S Description

AUIRF6215S developed by Infineon Technologies belongs to the family of HEXFET® Power MOSFETs specifically designed for Automotive applications. With the latest processing techniques, low on-resistance per silicon area can be delivered. Moreover, it is able to provide fast switching speed and ruggedized device design. All these characteristics enable it to offer high efficiency and optimum stability in Automotive and a wide variety of other applications.